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U.S. Assigns Patent to Carnegie Institution Process for CVD Diamond

Feb 14, 2011 4:52 PM   By Jeff Miller
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RAPAPORT... The U.S. Patent & Trademark Office (USPTO) assigned Carnegie Institution of Washington the patent number 7,883,684, representing a process to create "colorless single-crystal CVD diamond at rapid growth rate." The patent was developed by  Russell J. Hemley,  Ho-kwang Mao,  and Chih-shiue Yan all of Washington, D.C.  The patent application was filed on May 23, 2006, and awarded February 8, 2010.

The abstract of the patent  states: The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20 degree C, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8 percent to about 20 percent CH.sub.4 per unit of H.sub.2 and from about 5 to about 25 percent O.sub.2 per unit of CH.sub.4.

The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 .mu.m/hour.

Read the patent details.

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